國家第三代半導體技術創(chuàng)新中心（南京）（以下簡稱“南京中心”）是國家級創(chuàng)新平臺。

南京中心坐落于南京市江寧區(qū)，充分發(fā)揮南京豐富的基礎研究、應用基礎研究和技術創(chuàng)新資源優(yōu)勢，主攻電力電子、光電子、射頻電子等應用領域。南京中心以關鍵技術研發(fā)為核心使命，產(chǎn)學研協(xié)同推動科技成果轉(zhuǎn)移轉(zhuǎn)化與產(chǎn)業(yè)化，為區(qū)域和產(chǎn)業(yè)發(fā)展提供源頭技術供給，為科技型中小企業(yè)孵化、培育和發(fā)展提供創(chuàng)新服務，為支撐產(chǎn)業(yè)向中高端邁進、實現(xiàn)高質(zhì)量發(fā)展發(fā)揮戰(zhàn)略引領作用。

南京中心現(xiàn)擁有國內(nèi)頂尖的第三代半導體器件研發(fā)技術團隊，核心技術全國領先，國際先進。該團隊由中國電科首席專家柏松領銜，擁有博士以上學歷13人，高級以上職稱12人。

Introduction

National Center of Technology Innovation for Wide BandGap Semiconductors (Nanjing) is a state-level technology innovation center， located in Jiangning District, Nanjing，Nanjing Center was set up to develope power electronics, optoelectronics, RF electronics and other electronic device technologies，giving its full play to the local advantages in fundamental researches, applied researches and technological innovation ability. Nanjing Center will cooperate together with industries, universities and research institutes to promote the technological progress and the achievement transformation of science and technology. Nanjing Center will continuously commit itself to providing technical sources for regional and industrial development, offering services for cultivating and developing small-and medium-sized enterprises, leading industries to middle and high-end and achieve high-quality development.

Nanjing Center has established an R&D team which is among the best in China for wide bandgap semiconductor devices. The research team led by Bai Song, chief expert of CETC, consists of over ten doctors, and a number of senior engineers.